کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10407066 892830 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spectroscopic studies of sol-gel grown CdS nanocrystalline thin films for optoelectronic devices
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Spectroscopic studies of sol-gel grown CdS nanocrystalline thin films for optoelectronic devices
چکیده انگلیسی
CdS is one of the highly photosensitive candidate of II-VI group semiconductor material. Therefore CdS has variety of applications in optoelectronic devices. In this paper, we have fabricated CdS nanocrystalline thin film on ultrasonically cleaned glass substrates using the sol-gel spin coating method. The structural and surface morphologies of the CdS thin film were investigated by X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscopy (FESEM) respectively. The surface morphology of thin films showed that the well covered substrate is without cracks, voids and hole. The round shape particle has been observed in SEM micrographs. The particles sizes of CdS nanocrystals from SEM were estimated to be∼10-12 nm. Spectroscopic properties of thin films were investigated using the UV-vis spectroscopy, Photoluminescence and Raman spectroscopy. The optical band gap of the CdS thin film was estimated by UV-vis spectroscopy. The average transmittance of CdS thin film in the visible region of solar spectrum found to be∼85%. Optical band gap of CdS thin film was calculated from transmittance spectrum ∼2.71 eV which is higher than bulk CdS (2.40 eV) material. This confirms the blue shifting in band edge of CdS nanocrystalline thin films. PL spectrum of thin films showed that the fundamental band edge emission peak centred at 459 nm also recall as green band emission.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1894-1898
نویسندگان
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