کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10407071 | 892830 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling of Ga1âxInxAs1âyâzNySbz/GaAs quantum well properties for near-infrared lasers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1âxInxAs1âyâzNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be grown on GaAs substrate while having a bandgap smaller than that of GaInNAs. The influence of nitrogen and antimony on the bandgap and the transition energy is explored. Also, the effect of these two elements on the optical gain and threshold current density is investigated. For example, a structure composed of one 7.5 nm thick quantum well of material with In=30%, N=3.5%, Sb=1% composition exhibits a threshold current density of 339.8 A/cm2 and an emission wavelength of 1.5365 μm (at T=300 K). It can be shown that increasing the concentration of indium to 35% with a concentration of nitrogen and antimony, of 2.5% and 1%, respectively, results in a decrease of the threshold current density down to 253.7 A/cm2 for a two well structure. Same structure incorporating five wells shows a threshold current density as low as 221.4 A/cm2 for T=300 K, which agrees well with the reported experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1936-1942
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 6, December 2013, Pages 1936-1942
نویسندگان
A. Aissat, S. Nacer, F. Ykhlef, J.P. Vilcot,