Influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices

The influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices is studied using a recently reformulated tight binding method. A model, including interfacial reactivity at the ZnSe/GaAs interface, for calculating valence band offsets is presented. The model result of 1.02 eV for valence band offset at the ZnSe/GaAs interface is in good agreement with experiments.