کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10407149 | 892872 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1âxIn2Te4
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Single crystals of diluted magnetic semiconductor Cd1âxMnxIn2Te4 with x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1, α+β+β1, β and In2Te3+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of β-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1 and 0.22 and positive with small values for x=0.4 were detected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issue 4, August 2005, Pages 564-567
Journal: Materials Science in Semiconductor Processing - Volume 8, Issue 4, August 2005, Pages 564-567
نویسندگان
Wanqi Jie, Yongqin Chang, Weijun An,