کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10407149 892872 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1−xIn2Te4
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1−xIn2Te4
چکیده انگلیسی
Single crystals of diluted magnetic semiconductor Cd1−xMnxIn2Te4 with x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1, α+β+β1, β and In2Te3+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of β-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1 and 0.22 and positive with small values for x=0.4 were detected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issue 4, August 2005, Pages 564-567
نویسندگان
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