کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411110 894548 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes
چکیده انگلیسی
We obtain a transfer function and a circuit model for separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM-APD's). This model is used to calculate the frequency and time responses of the APD's, and to investigate the influence of the carrier velocities and dead-space effect on the bandwidth of the devices. It is shown that for thinner APD's, the dead-space effect can be included by considering a non-local model for carrier velocities, and a local model for impact ionization rates. The new approach is easier than the previous methods, and the calculated results are in good agreement with experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 871-877
نویسندگان
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