کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411133 | 894548 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and gas-sensing properties of NiFe2O4 semiconductor materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation and gas-sensing properties of NiFe2O4 semiconductor materials Preparation and gas-sensing properties of NiFe2O4 semiconductor materials](/preview/png/10411133.png)
چکیده انگلیسی
The gas-sensing materials, NiFe2O4, were prepared by inverse titrating chemical co-precipitation. After calcinations at 350-700 °C for 1 h, respectively, p-type semiconductor gas-sensing materials with inverse spinel structure were obtained. Effects of the calcining temperature on the phase constituents and microstructure were studied and characterized by simultaneous differential scanning calorimetry and thermogravimetry analysis (DSC-TGA), X-ray diffraction (XRD) and transmission electron microscopy (TEM). NiFe2O4 used as sensitive materials of indirect heating structure sensors were fabricated on an alumna tube with Au electrodes and platinum wires. The gas-sensing properties were determined for using reducing gases. The results demonstrated that the sensors based on NiFe2O4 had good sensitivity and good selectivity to toluene. The difference in response for various tested gases might be attributed to absorption of reducing gases and reaction between these gases and the absorbed oxygen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 1029-1033
Journal: Solid-State Electronics - Volume 49, Issue 6, June 2005, Pages 1029-1033
نویسندگان
Liufang Yang, Yongan Xie, Heyun Zhao, Xinghui Wu, Yude Wang,