کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411192 | 894558 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of carrier velocity related parameters on the propagation delay time of inverters with high-k gate dielectric CMISFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It has been reported that mobility (μeff) in high-k gate dielectric metal insulator semiconductor field effect transistors (MISFETs) is lower than that in conventional metal oxide semiconductor field effect transistors (MOSFETs). We investigated the influence of carrier velocity related parameters (CVRP), such as μeff in the high vertical electric field (Eeff) region where gate voltage is around power supply voltage, μeff in the low Eeff region where gate voltage is around threshold voltage, and saturation velocity (VSAT), on propagation delay time (Ïpd) of CMIS inverters using a circuit simulation. It is shown that Ïpd is strongly affected by μeff in the high Eeff region and that influences of μeff in the low Eeff region and VSAT on Ïpd are relatively small. Physical reasons for these phenomena are understood based on consideration of influences of mobility and saturation velocity on drain current taking the effect of channel length modulation into consideration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 155-161
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 155-161
نویسندگان
Mizuki Ono, Akira Nishiyama,