کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411202 | 894558 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measuring the specific contact resistance of contacts to semiconductor nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Measuring the specific contact resistance of contacts to semiconductor nanowires Measuring the specific contact resistance of contacts to semiconductor nanowires](/preview/png/10411202.png)
چکیده انگلیسی
Ohmic contacts to semiconductor nanowires are essential components of many new nanoscale electronic devices. Equations for extracting specific contact resistance (or contact resistivity) from several different test structures have been developed by modeling the metal/semiconductor contact as a transmission line, leading to the development of equations analogous to those used for planar contacts. The advantages and disadvantages of various test structures are discussed. To fabricate test structures using a convenient four-point approach, silicon nanowires have been aligned using field-assisted assembly and contacts fabricated. Finally, specific contact resistances near 5 Ã 10â4 Ω cm2 have been measured for Ti/Au contacts to p-type Si nanowires with diameters of 78 and 104 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 227-232
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 227-232
نویسندگان
S.E. Mohney, Y. Wang, M.A. Cabassi, K.K. Lew, S. Dey, J.M. Redwing, T.S. Mayer,