کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411206 | 894558 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT](/preview/png/10411206.png)
چکیده انگلیسی
The n+-AlGaN/p+-4H-SiC/n-4H-SiC HBT structure possesses large interfacial polarization charges as well as bulk and interfacial defects. Considerable leakage currents have thus far prevented significant development of this device. The piezoelectric polarization charge can be controlled by modifying the strain in the structure and can in fact negate the spontaneous charge for an Al0.3Ga0.7N layer on 4H-SiC. Although large-area AlGaN films are relaxed above a critical thickness, nano-heteroepitaxy theory predicts that AlGaN columns can be coherently grown on sub-micron oxide openings. The electrical characteristics were calculated for HBTs with strained and relaxed (Al)GaN emitter layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 251-256
Journal: Solid-State Electronics - Volume 49, Issue 2, February 2005, Pages 251-256
نویسندگان
M.A. Mastro, C.R. Jr., N.D. Bassim, M.E. Twigg, A. Edwards, R.L. Henry, R.H. Holm,