کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411637 894761 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer
چکیده انگلیسی
The present paper deals with the bipolar resistive switching of memory elements based on metal-organic complex CuTCNQ (copper-7,7',8,8'-tetracyanoquinodimethane) nanowires grown on a dedicated HfO2 oxide switching layer. Switching characteristics are explored either at millimeter scale on pad-size devices or at nanoscale by using conductive atomic force microscopy. Whatever the investigation scales, the basic memory characteristics appear to be controlled by copper ionic transport within a switching layer. This latter corresponds to either HfO2 layer in pad-size devices or nanogap formed at nanoscale between the atomic force microscopy conductive tip and CuTCNQ surface. Depending upon the observation scale, the switching layer (either HfO2 oxide or nanogap) acts as a matrix in which copper conductive bridges are formed and dissolved thanks to redox processes controlled in alternating applied bias voltages.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 56, Issue 1, February 2011, Pages 168-174
نویسندگان
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