کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411646 | 894761 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
With the downscaling of MOSFETs the relative importance of access resistances on transistor behavior and thus on integrated circuits performance significantly increases. Several DC and Radio Frequency characterization techniques have been proposed in the literature to extract the access resistances. It has been demonstrated that the mobility degradation with the vertical electric field in advanced MOSFETs and the transistor asymmetry might strongly degrade the accuracy of the extracted resistance values. Based on simulation and experimental results, correction factors are proposed and guidelines are drawn to help the user for choosing the right extrinsic resistance extraction methodology depending on a few figures of merit associated to the measured data of the FET device. Based on our conclusions, a robust characterization method for deep-submicron devices is proposed and successfully applied to FinFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 56, Issue 1, February 2011, Pages 214-218
Journal: Solid-State Electronics - Volume 56, Issue 1, February 2011, Pages 214-218
نویسندگان
J.C. Tinoco, A.G. Martinez-Lopez, J.-P. Raskin,