کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411667 | 894772 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes](/preview/png/10411667.png)
چکیده انگلیسی
We report an atypical device structure for a silicon-on-insulator (SOI) avalanche photodiode (APD) that uses vertically oriented surface plasmons to enable high device performance including high bandwidth and high responsivity. This device structure would allow for high bandwidth (>10Â GHz) read out integrated circuitry to be fabricated alongside the photodetector. A detailed numerical simulation of the device is performed that includes the use of the surface impedance boundary condition (SIBC) algorithm to calculate the optical resonance modes of the structure. The SIBC algorithm is integrated with a Poisson's equation solver and a Monte Carlo algorithm to model many aspects of the SOI APD device including bandwidth and responsivity as a function of applied bias. A brief discussion of surface plasmon modes and other optical modes in the APD and similar structures is also given.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1697-1701
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1697-1701
نویسندگان
David Crouse, Ravina Solomon,