کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411668 894772 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A spice-like reliability model for deep-submicron CMOS technology
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A spice-like reliability model for deep-submicron CMOS technology
چکیده انگلیسی
Continuing down scaling in CMOS technology has resulted in an increasing and urgent need for a Spice-like reliability model that is capable of predicting the long-term degradation of MOS devices and ICs. In this paper, we develop such a model based on the industry standard BSIM3 model and empirical degradation expressions for the threshold voltage and mobility of MOSFETs. The model is implemented in Cadence Spectre via Verilog-A, and good agreements between the measured and simulated results have been obtained for devices fabricated from the 0.18-μm CMOS technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 10, October 2005, Pages 1702-1707
نویسندگان
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