Keywords: دستگاه های MOS; Germanium oxidation; Reactive ion etcher; High-k dielectrics; MOS devices;
مقالات ISI دستگاه های MOS (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: دستگاه های MOS; Non-planar substrate; MOS devices; Interface trap capacitance; Deep depletion; Constant voltage stress
Keywords: دستگاه های MOS; Device characterization; Gate-controlled-diode measurement; Charge trapping; MOS devices
Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: Application to high-k material HfO2 based MOS devices
Keywords: دستگاه های MOS; MOS devices; Tunneling current; Semiconductor device modeling; TCAD;
Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices
Keywords: دستگاه های MOS; Monte-Carlo; Nanoscale; MOS devices; Phonon transport; Boltzmann equation;
SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering
Keywords: دستگاه های MOS; High-k dielectrics; MOS devices; I-V measurements; Photoluminescence; SHI irradiation;
Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon
Keywords: دستگاه های MOS; High-k dielectrics; MOS devices; SHI; HRBS; XRR;
Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition
Keywords: دستگاه های MOS; In-situ; Remote plasma; ALD; High-k; HfON; MOS devices;
Explicit drain current model of junctionless double-gate field-effect transistors
Keywords: دستگاه های MOS; JLFET; MOS devices; Compact modeling; Silicon devices
Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices
Keywords: دستگاه های MOS; Doping profile; Design optimization; Geometric programming; MOS devices;
Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)
Keywords: دستگاه های MOS; 4H-SiC; Thermal oxide; MOS devices; SiO2/SiC interface; Conduction band offset; Energy band alignment
Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
Keywords: دستگاه های MOS; MOS devices; Atomic Force Microscopy; Reliability; Variability; High-k dielectric; High-k crystallization
Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies
Keywords: دستگاه های MOS; MOS devices; LDMOS; Power transistors; Radio frequency;
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
Keywords: دستگاه های MOS; MOS devices; High-k; Dielectric breakdown reversibility; Leakage current; Reliability; Resistive switching;
Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior
Keywords: دستگاه های MOS; MOS devices; MOSFETs; FET memory integrated circuits; Logic devices; Static memory cell; SRAM
Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks
Keywords: دستگاه های MOS; High-K gate dielectrics; MOS devices; Interfacial transition regions; X-ray absorption spectroscopy; Spectroscopic ellipsometry; Di-vacancy defects; Native Ge dielectrics; Ge substrates
Temperature cycling of MOS-based radiation sensors
Keywords: دستگاه های MOS; MOS capacitor; MOS devices; Radiation effects; Radiation sensor; Dosimeter
Investigation of voltage-swing effect and trap generation in high-k gate dielectric of MOS devices by charge-pumping measurement
Keywords: دستگاه های MOS; High-k; Gate dielectric; MOS devices; Charge-pumping
High injection regime of the super barrier™ rectifier
Keywords: دستگاه های MOS; 73.40 Ei; 73.40 QvPower diode; MOS devices
A systematic study on MOS type radiation sensors
Keywords: دستگاه های MOS; 61.80.Ed; 07.85.−m; 84.37.+q; 61.80.−x; 73.20.−r; 81.40.WxMOS capacitor; MOS devices; Radiation effects; Radiation sensor; Dosimeters
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
Keywords: دستگاه های MOS; MOS devices; Reliability; Ultrathin oxide; Stress-induced leakage current; Radiation-induced leakage current
Dose radiation effects in FinFETs
Keywords: دستگاه های MOS; Silicon-on-insulator technology; MOS devices; Insulated gate FETs; Radiation effects
An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution
Keywords: دستگاه های MOS; Weibull distribution; Dielectric breakdown; Reliability; MOS devices
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
Keywords: دستگاه های MOS; Dielectric film; High-κ; Hafnium oxide; MOS devices; Reliability; Nanoscale
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
Keywords: دستگاه های MOS; MOS devices; High-κ gate dielectrics; Electrical performances; Defects; Reliability
Study of charge carrier quantization in strained Si-nMOSFETs
Keywords: دستگاه های MOS; MOS devices; Quantization effects; Inversion layer; MOSFET;
A spice-like reliability model for deep-submicron CMOS technology
Keywords: دستگاه های MOS; MOS devices; Reliability; Hot-carrier stress;
Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices
Keywords: دستگاه های MOS; MOS devices; Reliability; Lifetime model; Substrate current; Gate current;