Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior

Implants create isolated electric charge under the channel region of nFET and pFET. By this, a new local extrema in the transfer slope is obtained while maintaining low leakage in off state. The results are explained by electro-static field simulation and yield in a circuit model with two parallel channel resistors, indicating a double channel field effect transistor (DCT). The new DCTs allow complex functions in logic or small transistor bit cells in the future.