Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 109, September 2013, Pages 64-67

Chen-Chien Li, Kuei-Shu Chang-Liao, Chung-Hao Fu, Tsung-Lin Hsieh, Li-Ting Chen, Yu-Liang Liao, Chun-Chang Lu, Tien-Ko Wang,