کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7151275 1462265 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
چکیده انگلیسی
The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be 'opened' and 'closed' many times and that the BD recovery partially restores not only the current through the gate, but also the MOSFET channel related electrical characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65–66, November–December 2011, Pages 157-162
نویسندگان
, , , , , ,