Explicit drain current model of junctionless double-gate field-effect transistors

• An explicit compact model for the DG junctionless MOSFET has been proposed.
• The model is valid in all modes of device operation.
• The model is accurate for doping densities exceeding 1018 cm−3.
• Model has been verified and matches well with 2D Atlas simulations’ results.

This paper presents an explicit drain current model for the junctionless double-gate metal–oxide–semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 1018 cm−3, which are actually used for such devices.