کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411703 894783 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
GaAs MOS capacitors with photo-CVD SiO2 insulator layers
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
GaAs MOS capacitors with photo-CVD SiO2 insulator layers
چکیده انگلیسی
SiO2 films were successfully deposited onto n-GaAs substrates by photo-chemical vapor deposition (photo-CVD) using a deuterium (D2) lamp as the excitation source. With a 1 MV/cm applied electric field, it was found that the SiO2 films leakage current densities were 1.74 × 10−6 and 1.97 × 10−7 A/cm2, respectively, for the capacitors with as-deposited and 400 °C annealed insulator layers. The interface state densities, Dit, were also found to be small for the fabricated Al/photo-CVD-SiO2/GaAs metal-oxide-semiconductor field effect transistors (MOSFETs) capacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1077-1080
نویسندگان
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