کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411712 | 894783 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Frequency dependence of junction capacitance of GaN p-i-n UV detectors
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper frequency dependence of small-signal capacitance of p-i-n UV detectors, which were fabricated on GaN grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. The Schibli-Milnes model was used to analyze the capacitance-frequency characteristics. According to high frequency C-V measurements, the deep level mean concentration is about 2.98Â ÃÂ 1020Â cmâ3. The deep level is caused by the un-ionised Mg dopant. The calculated Mg activation energy is 260Â meV and the hole thermal capture cross section of the deep level is about 2.73Â ÃÂ 10â22Â cm2. The applicability of the Schibli-Milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. It is concluded that the analytic expression of the Schibli-Milnes model can still be used to describe the capacitance-frequency characteristics of GaN p-i-n UV detectors in good agreement with experiment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1135-1139
Journal: Solid-State Electronics - Volume 49, Issue 7, July 2005, Pages 1135-1139
نویسندگان
Yong Kang, Yunhua Xu, Degang Zhao, Jiaxiong Fang,