کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411917 | 894841 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A small granular controlled leakage reduction system for SRAMs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In current and future technologies, the leakage of the transistors is a major contributor to the total power dissipation. That effect is even reinforced in SRAM circuits because the matrix contains a high proportion of cells that are not accessed for extended periods of time. This paper presents a memory that by use of small granular control of the supply voltages can succeed in gaining at least a factor 10 in total power reduction. Using a distributed last stage of the SRAM decoder the stand-by and active cycle of the SRAM matrix can be controlled per word. This allows to selectively wake-up only the needed word and peripheral circuitry. When combined with monitoring and DC-DC conversion circuitry for the stand-by voltage, a closed loop system is attained that can minimise power consumption in the SRAM matrix.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 11, November 2005, Pages 1776-1782
Journal: Solid-State Electronics - Volume 49, Issue 11, November 2005, Pages 1776-1782
نویسندگان
Peter Geens, Wim Dehaene,