کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411944 | 894849 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The Schottky barrier height (SBH) variation and its dependence on applied voltage for NiSi/n-Si Schottky diodes with different SBH inhomogeneities have been studied by temperature-dependent current-voltage technique. The results show that the effective barrier height is strongly dependent on the SBH inhomogeneity and the applied voltage. The reduction of effective barrier height increases as the bias varies from forward to reverse, indicating that the pinch off, or more precisely saying, the presence of saddle point in the depletion region, does strongly affect the current transport. Under low reverse bias, the SBH reduction is proportional to one-fourth power of the band bending, which indicates that strip-like SBH inhomogeneity rather than patch-like SBH inhomogeneity exists in our samples. The strip region parameter Ï is determined to be 1.63Â ÃÂ 10â3 and 3.21Â ÃÂ 10â3Â Vâ1/2Â cmâ1/2 for the two diodes respectively. Under high reverse bias, the SBH reduction shows different behaviours for diodes with different SBH inhomogeneity. For diodes with small inhomogeneity, the SBH reduction increases faster than the one-fourth power of the band bending while for diodes with large inhomogeneity, the reduction increases more slowly than in the low reverse bias region. The reason is also explained in term of pinch off.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 4, April 2005, Pages 606-611
Journal: Solid-State Electronics - Volume 49, Issue 4, April 2005, Pages 606-611
نویسندگان
Guo-Ping Ru, R.L. Van Meirhaeghe, S. Forment, Yu-Long Jiang, Xin-Ping Qu, Shiyang Zhu, Bing-Zong Li,