کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10411945 894849 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the significance of the surface states in isolated AlxGa1−xN/GaN heterostructures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
On the significance of the surface states in isolated AlxGa1−xN/GaN heterostructures
چکیده انگلیسی
The significance of the surface states in isolated AlxGa1−xN/GaN heterostructures is investigated. A model based on a self-consistent solution of the Schrödinger, Poisson and charge balance equations is presented. The singular value decomposition is used to calculate the eigenstates of the real non-symmetric matrix which is obtained when a non-uniform mesh is used. The discontinuity of the spontaneous and piezoelectric polarization at the interface is taken into account. The results obtained for the 2DEG density and the surface potential agree well with theoretical and experimental data already published.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 49, Issue 4, April 2005, Pages 612-617
نویسندگان
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