High quality amorphous-crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition

► Silicon heterostructures prepared by remote RF PECVD using DC-biased grid ► Effective minority carrier lifetime of 6.3 ms achieved ► Two fold increase in τeff and compared with the best diode sample prepared in study ► Microstructure reduced by ~ 50% and a 12% relative reduction in hydrogen content