کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10639936 | 995857 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1âxNx structures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1âxNx structures Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1âxNx structures](/preview/png/10639936.png)
چکیده انگلیسی
We report a low-temperature photoluminescence spectra (LTPL) of GaAs1âxNx layers and two-dimension electron gas (2DEG) GaAs1âxNx/AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N]Â =Â 2Â ÃÂ 1018Â cmâ3. At low temperature, PL spectra of GaAs1âxNx layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs1âxNx/AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55Â meV is deduced by photoluminescence measurements in the 10-300Â K range for a laser power excitation PÂ =Â 6Â W/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 123, Issue 2, 20 November 2005, Pages 154-157
Journal: Materials Science and Engineering: B - Volume 123, Issue 2, 20 November 2005, Pages 154-157
نویسندگان
A. Hamdouni, F. Bousbih, S. Ben Bouzid, M. Oueslati, R. Chtourou, J.C. Harmand,