کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640258 | 995882 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Film thickness degradation of Au/GaN Schottky contact characteristics
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300Â Ã
, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin (<500Â Ã
) film Schottky diodes show significantly better rectification characteristics than those of thick Au films (>500Â Ã
). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 117, Issue 1, 25 February 2005, Pages 21-25
Journal: Materials Science and Engineering: B - Volume 117, Issue 1, 25 February 2005, Pages 21-25
نویسندگان
K. Wang, R.X. Wang, S. Fung, C.D. Beling, X.D. Chen, Y. Huang, S. Li, S.J. Xu, M. Gong,