کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10666425 | 1007705 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Vacuum evaporated CdSe thin films and their characteristics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CdSe films that were vacuum deposited using the laboratory synthesized CdSe powder as source material were studied. The substrate temperature was varied in the range 30-200 °C. X-ray diffraction (XRD) studies indicated preferential orientation in the (002) direction. SEM studies indicated increase of grain size from 1.9 to 3.9 μm with increase of substrate temperature. The power conversion efficiency was found to be 7.0% under an illumination of 60 mW cmâ2 after photoetching. A peak quantum efficiency of 0.6 was obtained for an incident wavelength of 720 nm. Semiconducting parameters were estimated. Preliminary studies on large area films (25 cm2) indicated an efficiency of 5.9%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 59, Issue 1, January 2005, Pages 15-18
Journal: Materials Letters - Volume 59, Issue 1, January 2005, Pages 15-18
نویسندگان
K.R. Murali, K. Srinivasan, D.C. Trivedi,