کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10668733 1008463 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of an amorphous silicon mask PECVD process for deep wet etching of Pyrex glass
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Optimization of an amorphous silicon mask PECVD process for deep wet etching of Pyrex glass
چکیده انگلیسی
Silicon is well known as an inert material in hydrofluoric acid and can be used during wet etching of glass as a mask with good results. In this paper, we report on the optimization of a PECVD amorphous silicon layer as etch mask for deep Pyrex glass micromachining in hydrofluoric acid solution. Our study reveals that the residual stress, especially the tensile stress, in the amorphous silicon masking layer is responsible for the defects generated during the etching process. The PECVD process and the subsequent annealing process have been optimized to reduce the compressive residual stress in the amorphous silicon layer. The maximum etch depth of glass achieved is as high as 300 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 192, Issue 1, 1 March 2005, Pages 43-47
نویسندگان
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