Effect of 8Â MeV Si ions irradiation and thermal annealing in ZnO thin films

► ZnO thin films were deposited by RF magnetron sputtering on silicon (100) wafers. Samples were irradiated by 8 MeV Si ions and thermal annealed treatment. Defects inside the thin films and its implications were discussed by PL and SE. PL confirmed the presence of energy states in the forbidden band-gap. SE by T-L plus Lorentz oscillator was the best model to describe irradiated sample. Band-gap energy and excitonic position post-treatment effect have been reported.