Keywords: B1 اکسید روی; A1. Zinc acetate; A2. Oriented attachment; B1. Nanocrystals; B1. Zinc oxide;
مقالات ISI B1 اکسید روی (ترجمه نشده)
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Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy
Keywords: B1 اکسید روی; A2. Single crystal growth; A3. Molecular beam epitaxy; B1. Gallium nitride; B1. Nitrides; B1. Oxides; B1. Zinc oxide;
Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD
Keywords: B1 اکسید روی; A1. Photoluminescence (PL); A1. Positron annihilation spectroscopy; A1. Scanning electron microscopy (SEM); A1. X-ray diffraction (XRD); A3. Atomic layer epitaxy; B1. Zinc oxide
Formation of ZnO rods with varying diameters from ε-Zn(OH)2
Keywords: B1 اکسید روی; A1. Nanostructures; A1. Crystal morphology; B1. Nanorods; B1. Zinc oxide; B2. Semiconducting II–VI material
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy
Keywords: B1 اکسید روی; A2. Single crystal growth; A3. Molecular beam epitaxy; A3. Polarity control; B1. Nitrides; B1. Zinc oxide;
Influence of r.f power on structural properties of ZnO thin films
Keywords: B1 اکسید روی; A1. Atomic force microscopy; A1. High resolution transmission electron microscopy; A1. X-ray diffraction; A3. r.f. Magnetron sputtering; B1. Zinc oxide;
Leidenfrost temperature related CVD-like growth mechanism in ZnO-TFTs deposited by pulsed spray pyrolysis
Keywords: B1 اکسید روی; A1. Film growth; A1. Leidenfrost; A2. Spray pyrolysis; A3. Chemical vapor deposition processes; B1. Zinc oxide; B3. Thin film transistor
Growth control of nonpolar and polar ZnO/MgxZn1−xOZnO/MgxZn1−xO quantum wells by pulsed-laser deposition
Keywords: B1 اکسید روی; A1. Reflection high energy electron diffraction; A1. Atomic force microscopy; A1. X-ray diffraction; A3. Physical vapor deposition processes; A3. Quantum wells; B1. Zinc oxide
Effect of 8Â MeV Si ions irradiation and thermal annealing in ZnO thin films
Keywords: B1 اکسید روی; A1. Defects; A1. Ion beam; A1. Photoluminescence; A1. Spectroscopic ellipsometry; B1. Zinc oxide; B2. Semiconducting materials;
MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air
Keywords: B1 اکسید روی; A3. MOCVD; B1. Zinc oxide; B1. Zinc compounds
Growth of ZnOx:Al by high-throughput CVD at atmospheric pressure
Keywords: B1 اکسید روی; A3. Metalorganic chemical vapor deposition; B1. Thin films; B1. Transparent conductive oxide; B1. Zinc Oxide; B3. Solar cells
Growth habit control of ZnO single crystals in molten hydrous alkali solutions
Keywords: B1 اکسید روی; A1. Crystal morphology; A2. Growth from hydrous alkali melts; B1. Zinc Oxide; B2. Semiconducting II–VI materials
Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal method
Keywords: B1 اکسید روی; A1. Nanorod; A1. Atomic force microscopy; A1. Scanning electron microscopy; A1. X-ray diffraction; A1. Photoluminescence; B1. Zinc oxide
Synthesis of LiGaO2 nanocrystals and their application toward bright UV emission from ZnO quantum dots
Keywords: B1 اکسید روی; A1. Nanostructures; A1. Quantum dots; B1. Nanomaterials; B1. Zinc oxide; B2. Phosphors; B2. Semiconducting ternary compounds
Growth and characteristics of annealed ZnO layer on 6H–SiC substrate
Keywords: B1 اکسید روی; A1. X-ray diffraction; A1. Atomic force microscopy; B1. Zinc oxide; B1. 6H–Silicon carbide; A1. Thermal annealing
Fabrication and characterization of three-dimensional core–shell structure ZnO photonic crystals by magnetron sputtering based on opal template
Keywords: B1 اکسید روی; A3. Magnetron sputtering; B1. Composite opals; B1. Photonic crystal; B1. Zinc oxide
Effect of thickness and heat treatment on the crystallite size and dislocation density of nanostructured zinc oxide thin films
Keywords: B1 اکسید روی; A1. X-ray diffraction; A1. Defects; A2. Sol–gel method; B1. Zinc oxide; B2. Semiconducting materials
Surface morphology, structural and optical properties of polar and non-polar ZnO thin films: A comparative study
Keywords: B1 اکسید روی; 81.15.Hi; 78.55.Et; 78.66.HfA1. X-ray diffraction; A1. Atomic force microscopy; Al. Photoluminescence; A3. Molecular beam epitaxy; B1. Zinc oxide
Self-assembled tin-doped ZnO nanowire and nanoplate structures grown by thermal treatment of ZnS powder
Keywords: B1 اکسید روی; 61.46.Km; 68.37.Hk; 78.60.HkA1. Doping; A1. Nanostructures; B1. Zinc oxide
Surface-diffusion induced growth of ZnO nanowires
Keywords: B1 اکسید روی; 81.05.Dz; 81.15.Aa; 81.15.Kk; 62.23.HjA1. Nanowires; A3. Vapor phase epitaxy; B1. Zinc oxide; B2. Semiconducting II–VI materials
New method for fabricating ZnO nanowires deposited onto CdTe substrates
Keywords: B1 اکسید روی; 61.46.Km; 61.72.Uj; 68.49.SfA1. Nanowires; A1. Fundamental aspects; B1. Zinc oxide; B1. Cadmium telluride
Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma
Keywords: B1 اکسید روی; 73.61.Ga; 81.15.Hi; 68.55.JkA1. Atomic force microscopy; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Zinc oxide
Synthesis, strucutral and optical properties of vanadium doped zinc oxide nanograins
Keywords: B1 اکسید روی; 61.05.C−; 61.46.Km; 61.46.Hk; 78.67.BfA1. Characterization; A2. Ceramic double sintering; B1. Nanomaterials; B1. Zinc oxide; B2. Dilute magnetic semiconductor
Feasibility study of barium fluoride films as a sacrificial layer for patterning of ZnO nanowire arrays
Keywords: B1 اکسید روی; 81.05.Dz; 81.07.âb; 81.15.Gh; 81.16.âc; A1. Etching; A1. Nanostructures; A3. Metal-organic chemical vapor deposition; B1. Barium fluoride; B1. Zinc oxide; B2. Semiconducting materials;
Fabrication of UV detectors based on ZnO nanowires using silicon microchannel
Keywords: B1 اکسید روی; 78.55.Et; 81.15.Gh; 61.46.Km; 85.60.GzA1. Etching; A1. Nanostructures; A3. Metal organic chemical vapor deposition; B1. Zinc oxide; B3. UV detector
Investigation of morphology and photoluminescence of hydrothermally grown ZnO nanorods on substrates pre-coated with ZnO nanoparticles
Keywords: B1 اکسید روی; 81.05.Dz; 81.10.Dn; 68.55.J; 68.55.Ln; 78.55.−m; 78.30.−jA1. Characterization; A1. Defects; A1. Nanostructures; B1. Zinc Oxide
Synthesis, characterization and optical properties of ZnO nanoparticles with controlled size and morphology
Keywords: B1 اکسید روی; 81.05.Dz; 81.10.Dn; 78.67.−n; 78.67.BfA1. Crystal growth; A2. Polyol forced hydrolysis; B1. Zinc oxide; B2. Luminescence
Band gap engineering of ZnO thin films by In2O3 incorporation
Keywords: B1 اکسید روی; 72.20; 78.66; 73.50j; 61.16cA1. Hall effect; A1. Mobility; B1. Zinc oxide; B1. Indium oxide; A3. Pulsed laser deposition; B3. Transparent electrode
The growth of ZnO crystals from the melt
Keywords: B1 اکسید روی; 81.05.Dz; 81.10.FqA1. Phase equilibria; A2. Bridgman technique; B1. Zinc oxide; B2. Semiconducting II–VI materials
High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target
Keywords: B1 اکسید روی; 81.15.Cd; 81.15.−z; 91.60.Ed; 61.72.DdA1. High-resolution X-ray diffraction; A3. rf Sputtering; B1. Zinc oxide; B2. Optical properties
Microstructures, electrical and optical characteristics of ZnO thin films by oxygen plasma-assisted pulsed laser deposition
Keywords: B1 اکسید روی; 81.15.Fg; 81.05.Dz; 68.55.−a; 72.20.−i; 87.64.Je; 78.55.−mA1. Crystal structure; A1. Electrical properties; A1. Photoluminescence; A1. Raman scattering; A3. Pulsed laser deposition; B1. Zinc oxide
Structure and photoresponse characteristics of ZnO thin films grown at high oxygen partial pressure
Keywords: B1 اکسید روی; 81.15.Fg; 81.05.Dz; 68.55.−a; 72.40.+w; 73.40.SxA1. Crystal structure; A3. Pulsed laser deposition; B1. Zinc oxide; B3. UV detector
Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE
Keywords: B1 اکسید روی; 68.55.Jk; 81.05.Dz; 81.15.HiA1. Atomic force microscopy; A1. Photoluminescence; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Zinc oxide
Two-step growth of ZnO films with high conductivity and high roughness
Keywords: B1 اکسید روی; 68.55.−a; 61.10.−i; 61.72.−yA2. Seed layer; A3. Metal organic chemical vapor deposition (MOCVD); B1. Transparent conductive oxide (TCO); B1. Zinc oxide; B2. Sn-doped In2O3 (ITO)
Effect of the pH on the growth and properties of sol–gel derived boron-doped ZnO transparent conducting thin film
Keywords: B1 اکسید روی; 73.61.LeA1. Spin coating; A1. Transparent conducting; A3. Sol–gel; B1. Zinc oxide
The effect of substrate temperature on filtered vacuum arc deposited zinc oxide and tin oxide thin films
Keywords: B1 اکسید روی; 42.70.a, 68.35.Ct, 78.20.Ci, 78.40.Fy, 81.15.EfA1. Characterization; A3. Filtered vacuum arc deposition; B1. Tin oxide; B1. Zinc oxide
Growth of ZnO nanorods via metalorganic chemical vapor deposition and their electrical properties
Keywords: B1 اکسید روی; 81.07.Bc; 85.30.Tv; 61.46.+w; 73.63.Bd; 81.15.GhA1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Zinc oxide; B2. Semiconducting II–VI materials; B3. Field effect transistors
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
Keywords: B1 اکسید روی; 68.55.Jk; 72.80.Ey; 81.05.Dz; 81.15.CdA1. Crystal structure; A1. Thermal annealing; A1. X-ray diffraction; A3. RF magnetron sputtering; B1. Zinc oxide; B2. Semiconducting II–VI materials
Process and characterization of macroporous periodic nanostructured zinc oxide via electrodeposition
Keywords: B1 اکسید روی; 78.66.Hf; 81.05.Rm; 81.15.Pq; 42.70.QsA1. Macroporous; A2. Electrodeposition; B1. Zinc Oxide; B3. Photonic band gap
Codoping in ZnO using GaN by pulsed laser deposition
Keywords: B1 اکسید روی; 71.55.Gs, 73.61.Ga, 78.66.Hf; A1. Codoping; A1. Defects; A1. Characterisation; A3. Pulsed laser deposition; B1. Gallium nitride; B1. Zinc oxide;
Influence of annealing on optical properties and surface structure of ZnO thin films
Keywords: B1 اکسید روی; 68.55.−a; 78.20.Ci; 81.40.TvA1. Annealing; A1. Optical properties; A1. Surface structure; B1. Zinc oxide
Persistent n-type photoconductivity in p-type ZnO
Keywords: B1 اکسید روی; 72.40.+w; 71.55.Gs; 72.20.Fr; 72.60.+g; 72.80.Ey; 72.20.My; 73.50.Dn; 73.50.Jt; 73.50.Pz; 73.61.GaA1. Mixed conduction; A1. Persistent photoconductivity (ppc); A1. Photo-Hall-effect; B1. p-type ZnO; B1. Zinc oxide; B2. Semiconducting II–VI materials
Temperature-dependent growth of zinc oxide thin films grown by metal organic chemical vapor deposition
Keywords: B1 اکسید روی; 68.55.Gi; 61.10.−I; 61.72.VvA3. Metal organic chemical vapor deposition; B1. Transparent conductive oxide (TCO); B1. Zinc oxide; B3. Thin film solar cells
Synthesis and optical properties of nanometer to micrometer wide hexagonal cones and columns of ZnO
Keywords: B1 اکسید روی; 61.46.+w; 68.37.Hk; 68.37.Lp; 78.55.−mA1. Scanning and transmission electron microscopy; A1. Photoluminescence; A2. Solvothermal process; B1. Nanocones; B1. Nanorod; B1. Zinc oxide
Self-assembled ZnO nano-crystals and exciton lasing at room temperature
Keywords: B1 اکسید روی; 42.65.Ky; 42.70.Mp; 78.66.HfA1. Nanostructures; A1. Quantum size effect; B1. Free excitons; B1. Zinc oxide; B3. Ultraviolet lasing
Temperature induced shape change of highly aligned ZnO nanocolumns
Keywords: B1 اکسید روی; 78.66.Hf; 78.67.Bf; 81.15.Gh; A1. Nanostructures; A2. Single crystal growth; A3. Metalorganic chemical vapor deposition; B1. Zinc oxide; B2. Semiconducting II-VI materials;
Early stage growth behavior of laser-deposited heteroepitaxial ZnO films on Al2O3 (0Â 0Â 0Â 1)
Keywords: B1 اکسید روی; 68.55.Jk; 61.10.Nz; 81.15.Fg; A1. High resolution X-ray diffraction; A3. Laser epitaxy; B1. Zinc oxide; B2. Semiconducting II-VI materials; B3. Light emitting diodes;
Early stage growth behavior of ZnO nanoneedle arrays on Al2O3 (0Â 0Â 0Â 1) by metalorganic chemical vapor deposition
Keywords: B1 اکسید روی; 61.10.Nz; 68.55.Jk; 78.67.ân; 79.60.Jv; 81.07.Bc; 81.15.Gh; A1. High-resolution X-ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Zinc oxide; B2. Semiconducting II-VI materials; B3. Light emitting diodes;
Improvement in microstructure and crystal alignment of ZnO films grown by metalorganic chemical vapor deposition using a seed layer
Keywords: B1 اکسید روی; 68.55.âa; 81.05.Dz; 81.15.Gh; A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Zinc oxide; B2. Semiconducting II-VI materials; B3. Light-emitting diodes;
Comparative study of diethylzinc and dimethylzinc for the growth of ZnO
Keywords: B1 اکسید روی; 68.55.Jk; 78.55.Et; 81.05.Dz; A3. Metal-organic chemical vapor deposition; B1. Zinc oxide; B2. Diethylzinc; B2. Dimethylzinc;