کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794820 | 1023708 | 2008 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target](/preview/png/1794820.png)
Zinc oxide (ZnO) epilayers were grown on (0 0 0 1) sapphire substrates by reactive sputtering of a zinc target at substrate temperatures of 300 and 600 °C. High-resolution X-ray diffraction, UV–visible and photoluminescence (PL) measurements were carried out to obtain information about epitaxy, micro-structure and optically active defects in these epilayers. Though the epilayer deposited at 600 °C showed a slightly smaller crystallite size along the growth direction as compared to that deposited at 300 °C, it was much superior in terms of other micro-structural parameters. It exhibited significantly small values of micro-strain (2×10−4), rocking curve width (∼0.13°), mosaic twist (0.35°), and screw (6.6×108 cm−2)- and edge (2.9×1011 cm−2)-type dislocation densities. Absorption and PL studies showed the high optical quality of the ZnO epilayer deposited at 600 °C, which exhibited a narrow (full-width at half-maximum—FWHM∼96 meV) and intense band edge luminescence at room temperature. The micro-structural parameters and the sharp PL peak show that the reactively sputtered ZnO epilayer grown at 600 °C is comparable in epitaxial and optical quality with ZnO grown by other epitaxial processes.
Journal: Journal of Crystal Growth - Volume 310, Issue 22, 1 November 2008, Pages 4640–4646