کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795357 | 1524483 | 2007 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE](/preview/png/1795357.png)
The undoped ZnO thin films grown on Si (1 1 1) substrates by plasma-assisted molecular beam epitaxy (P-MBE) were reported. The effects of growth temperature, the thickness of low temperature ZnO buffer layer and Zn/O ratio on the quality of high-temperature-overgrown ZnO main layer were studied by atomic force microscopy (AFM), X-ray diffraction (XRD) and room-temperature photoluminescence (PL) spectra. These results showed that it was difficult to directly obtain high quality ZnO films on Si substrate. By introducing a thin ZnO buffer layer at 350 °C, c-axis preferred orientation ZnO films with improved optical properties were obtained at 750 °C. However, the thickness of ZnO buffer layer and Zn/O ratio in the ZnO main layer greatly influenced the quality of high-temperature-overgrown ZnO main layer.
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 373–377