کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830240 | 1524505 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparative study of diethylzinc and dimethylzinc for the growth of ZnO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO films grown by low-pressure metal-organic chemical vapor deposition using diethylzinc (DEZn) and dimethylzinc (DMZn) as zinc precursors exhibited the different growth mechanisms and properties. The film grown with DMZn was covered by typical three-dimensional islands, while the film grown with DEZn shows a quasi-two-dimensional lateral growth features of large hexagonal grains and a smooth surface. Raman scattering measurements investigated the existence of high content of carbon and hydrogen in the DMZn grown films, due to which the photoluminescence properties are consequently degraded greatly with the distinct deep-level emissions. In contrast, ZnO grown with DEZn exhibits the superior structural and optical properties, as well as a lower carbon impurity concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 489-494
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 489-494
نویسندگان
Jiandong Ye, Shulin Gu, Shunming Zhu, Songmin Liu, Wei Liu, Xin Zhou, Liqun Hu, Rong Zhang, Yi Shi, Youdou Zheng,