کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8151365 | 1524441 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy](/preview/png/8151365.png)
چکیده انگلیسی
Gallium nitride (GaN) epitaxial layers have been grown on O face (0001¯) zinc oxide (ZnO) substrates by ammonia source molecular beam epitaxy. By adjusting the growth temperature and the III/V ratio during the nucleation stage, GaN layers with Ga (0001) or N (0001¯) polarities have been obtained. We show that low growth temperatures (<550 °C) and Ga-rich conditions lead to Ga-polar layers, whereas higher growth temperatures (>600 °C) and N-rich conditions lead to N-polar layers. Furthermore, the formation of a zinc gallate (ZnGa2O4) interfacial layer between GaN and ZnO has been evidenced, which is responsible for the growth of Ga-polar GaN layers. The structural and optical properties of Ga- and N-polar GaN layers have been characterized and Ga-polar GaN layers exhibit higher crystal quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 388, 15 February 2014, Pages 35-41
Journal: Journal of Crystal Growth - Volume 388, 15 February 2014, Pages 35-41
نویسندگان
Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.-M. Chauveau,