Improvement of structural and electrical properties of Cu2O films with InN epilayers

► There is a 30° in-plane rotation between Cu2O and InN, which leads to a smaller lattice mismatch. ► As-oxidized Cu2O on InN presents a higher resistance and a lower electron concentration. ► The conduction-type of Cu2O converts from n- to p-type, after annealed at 500 °C in vacuum. ► The Cu2+ absorption of the Cu2O/InN determines the conductive-type.