Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

► MBE growth of GaN nanowires on ALD aluminum oxide. ► Nanowires grow crystalline regardless of amorphous nature of Al2O3 layer. ► Nanowires are free of dislocations even at Al2O3 interface. ► Yields method of producing crystalline material on amorphous substrate.