کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707199 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray diffraction analysis of step-graded InxGa1âxAs buffer layers grown by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High resolution X-ray diffraction reciprocal space mapping (RSM) is used to study the crystal quality of step-graded InxGa1âxAs buffer layers grown on GaAs (0Â 0Â 1) substrates by molecular beam epitaxy (MBE) using two growth methods. The lateral correlation length of the buffer layers are described by the FWHM of diffraction peaks along the lateral directions extracted from RSM, which are good indicators of the layer's crystalline quality. The quality improvement of InxGa1âxAs buffer layers grown at low temperature with in-situ annealing could be determined by XRD-RSM, which is also consistent with TEM results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 17-20
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 17-20
نویسندگان
Hai Lin, Yijie Huo, Yiwen Rong, Robert Chen, Theodore I. Kamins, James S. Harris,