کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707200 | 1023644 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE](/preview/png/10707200.png)
چکیده انگلیسی
Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 21-25
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 21-25
نویسندگان
Yuxin Song, Shumin Wang, Xiaohui Cao, Zonghe Lai, Mahdad Sadeghi,