کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707357 | 1023644 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nucleation and growth of Au-assisted GaAs nanowires on GaAs(1Â 1Â 1)B and Si(1Â 1Â 1) in comparison
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The nucleation and growth of GaAs nanowires fabricated by molecular beam epitaxy (MBE) following the Au-assisted vapor-liquid-solid mechanism were compared on GaAs(1Â 1Â 1)B and on Si(1Â 1Â 1) substrates. On both substrates, reflection high-energy electron diffraction (RHEED) patterns and scanning electron microscopy (SEM) images of several samples belonging to a growth time series were analyzed. During the nucleation stage, growth on Si(1Â 1Â 1) is dominated by horizontally growing traces and coalescing islands, while growth on GaAs(1Â 1Â 1)B proceeds instantly in the vertical direction. After this nucleation stage, the Si substrate is covered by a closed, rough GaAs layer, and nanowires of similar shape grow on both substrates with similar axial and radial growth rates. However, the diameter of the nanowires on Si(1Â 1Â 1) is different than that on GaAs(1Â 1Â 1)B, because the size of the Au droplets, which result from the annealing of a thin Au layer, is different on the two types of substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 311-314
Journal: Journal of Crystal Growth - Volume 323, Issue 1, 15 May 2011, Pages 311-314
نویسندگان
Steffen Breuer, Maria Hilse, Lutz Geelhaar, Henning Riechert,