کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707418 | 1023647 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The use of heater-magnet module for Czochralski growth of PV silicon crystals with quadratic cross section
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The first experimental results show single crystalline Si crystals with reproducible square cross sections up to 91Ã91 mm2 including rounded corners. Until now TMF frequencies of f=180 and 300 Hz and a phase shift of Ï=90° were applied. For high-purified material an average facet undercooling of ÎTâ2 K has been deduced from the observed rectangular side plane widths. According to high-resolution transmission electron microscopy (HRTEM) the four macroscopically flat faces are microscopically composed of {1 1 0} sub-facets and {1 1 1} macrosteps. Etch pit densities (EPD) between 0 and 104 cmâ2 were ascertained. Due to the magnetically induced high-speed melt flow toroid around the growing crystal a relatively low and homogeneously distributed oxygen concentration can be achieved. A minimum value of 7.5Ã1017 cmâ3 was measured in high-purity as-grown crystals at a TMF frequency of f=300 Hz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 249-254
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 249-254
نویسندگان
P. Rudolph, M. Czupalla, B. Lux, F. Kirscht, Ch. Frank-Rotsch, W. Miller, M. Albrecht,