کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10707482 1023647 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
PVT growth of GaN bulk crystals
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
PVT growth of GaN bulk crystals
چکیده انگلیسی
Limitations in ammonia-based vapour growth of bulk GaN require the search for a replacement of ammonia as a precursor of reactive nitrogen. We propose the implementation of a plasma-activated nitrogen source instead. In this contribution we present the current development status of a long-term stable plasma source for reactive nitrogen supply as well as a novel gallium source setup, both of which serve as the basis of a new approach to grow GaN bulk crystals. Following the characterization of the Ga source, the evaporation energy was determined as (284±9) kJ/mol and the transport becomes saturated at a carrier gas flow of 200 sccm N2. Short microwave pulses are applied to operate the plasma source. Crystal growth conditions require high power and stable currents of the microwave pulses - which will be achieved using a custom-built power supply - to reduce the thermal loads at the desired high-pressure operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 406-410
نویسندگان
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