کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707482 | 1023647 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
PVT growth of GaN bulk crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Limitations in ammonia-based vapour growth of bulk GaN require the search for a replacement of ammonia as a precursor of reactive nitrogen. We propose the implementation of a plasma-activated nitrogen source instead. In this contribution we present the current development status of a long-term stable plasma source for reactive nitrogen supply as well as a novel gallium source setup, both of which serve as the basis of a new approach to grow GaN bulk crystals. Following the characterization of the Ga source, the evaporation energy was determined as (284±9) kJ/mol and the transport becomes saturated at a carrier gas flow of 200 sccm N2. Short microwave pulses are applied to operate the plasma source. Crystal growth conditions require high power and stable currents of the microwave pulses - which will be achieved using a custom-built power supply - to reduce the thermal loads at the desired high-pressure operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 406-410
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 406-410
نویسندگان
D. Siche, D. Gogova, S. Lehmann, T. Fizia, R. Fornari, M. Andrasch, A. Pipa, J. Ehlbeck,