کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707624 | 1023760 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sublimation growth of AlN bulk crystals in Ta crucibles
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
AlN single crystals of 0.5 in diameter and up to 10-12 mm long have been grown by sublimation/recondensation in pre-treated tantalum crucibles. Growth of 45 mm diameter and 4 mm long polycrystalline AlN boules has also been demonstrated. After high-temperature pre-treatment in a carbon-containing atmosphere, the tantalum crucibles can be used for 300-400 h of AlN sublimation growth at 2200-2300 °C, without Ta impurities or additional C impurities in concentrations higher than 100 ppm appearing in the crystals. Both self-seeded growth of polycrystalline AlN on the crucible lid and seeded growth of single-crystal AlN on (0 0 0 1) SiC plates and AlN/SiC templates are demonstrated. X-ray diffractometry and topography of the grown crystals show a block structure with the characteristic block size >200 nm and the scatter of FWHMs of Ï-scans in the range of 60-750 arcsec. Test slicing and polishing of the crystals and test MBE growth of AlGaN/AlN structures on the obtained AlN substrates have been successfully performed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 93-100
Journal: Journal of Crystal Growth - Volume 281, Issue 1, 15 July 2005, Pages 93-100
نویسندگان
E.N. Mokhov, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, A.D. Roenkov, A.S. Segal, A.A. Wolfson, Yu.N. Makarov, M.G. Ramm, H. Helava,