کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707775 | 1023779 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric properties and high tunability of (1Â 0Â 0)- and (1Â 1Â 0)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dielectric properties and high tunability of (1Â 0Â 0)- and (1Â 1Â 0)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition Dielectric properties and high tunability of (1Â 0Â 0)- and (1Â 1Â 0)-oriented (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition](/preview/png/10707775.png)
چکیده انگلیسی
(Ba0.50Sr0.50)TiO3 (BST) thin films were deposited on Pt(1Â 1Â 1)/Ti/SiO2/Si(1Â 0Â 0) substrates without and with LaNiO3 (LNO) bufferlayer prepared by pulsed laser deposition (PLD). The BST thin films directly grown on Pt/Ti/SiO2/Si substrates without and with LNO bufferlayer exhibited highly (1Â 0Â 0) and (1Â 1Â 0) orientation, respectively. The dielectric constant of the 800-nm-thick BST films with LNO bufferlayer was 1010 at 1Â MHz, which was higher than that of BST film with non-bufferlayer (â¼851). Also, the tunabilities of BST thin films with (1Â 0Â 0)- and (1Â 1Â 0)-orientation were â¼63% and â¼62%, respectively, at the applied field of 262.5Â kV/cm. Improved dielectric constant has been attributed to LNO bufferlayer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issue 4, 15 December 2005, Pages 613-619
Journal: Journal of Crystal Growth - Volume 285, Issue 4, 15 December 2005, Pages 613-619
نویسندگان
X.G. Tang, H.F. Xiong, L.L. Jiang, H.L.W. Chan,