کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714029 | 1025564 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and magnetic properties of γâ²-Fe4N films grown on MgO-buffered Si (0 0 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
γâ²-Fe4N thin films were grown on MgO-buffered Si (1 0 0) by pulsed laser deposition technique. Different crystallographic orientations and in-plane magnetic anisotropies were achieved by varying the growth temperature of the MgO buffer layer. When the MgO buffer layer was grown at room temperature, the γâ²-Fe4N film shows isotropic in-plane magnetic properties without obvious texture; while in-plane magnetic anisotropy was recorded for the γâ²-Fe4N films deposited on a 600 °C-grown-MgO buffer due to the formation of a (1 0 0)-oriented biaxial texture. Such a difference in in-plane magnetic anisotropy is attributed to the epitaxial growth of γâ²-Fe4N film on an MgO buffer with relaxed strain when the MgO layer was grown at a high temperature of 600 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 24, 15 December 2012, Pages 4783-4786
Journal: Physica B: Condensed Matter - Volume 407, Issue 24, 15 December 2012, Pages 4783-4786
نویسندگان
Jing Li, Yinzhu Jiang, Tianyu Ma, Cong Lu, Yongbing Xu, Deren Yang, Mi Yan,