کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10714207 | 1025571 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and optical properties of Geî¸Gaî¸S films deposited by thermal evaporation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Amorphous Geî¸Gaî¸S thin films have been successfully deposited onto glass slides at room temperature by the thermal evaporation technique. The structural units of the films were studied using Raman spectroscopy. In addition to the basic structural units of GeS4 tetrahedra, there are some Sî¸S and Geî¸Ge homopolar bonds which exist in the films. The increase in Ge atoms leads to the replacement of Sî¸S bonds by Geî¸Ge bonds, and the isolated Ge(Ga)S4 tetrahedra units transform into corner-sharing or edge-sharing Ge(Ga)S4 tetrahedra units in the films. The refractive index and optical band gap were derived from transmission spectra of films. The values of optical band gap decrease while the refractive indices increase with increasing Ge content. Composition dependence of optical band gap and refractive index has also been interpreted in terms of the variation in the structure of films based on Raman spectra.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 12, 15 June 2012, Pages 2340-2343
Journal: Physica B: Condensed Matter - Volume 407, Issue 12, 15 June 2012, Pages 2340-2343
نویسندگان
Jing Fu, Xiang Shen, Guoxiang Wang, Qiuhua Nie, Fen Chen, Jun Li, Wei Zhang, Shixun Dai, Tiefeng Xu,