کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11001535 | 460076 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Size matching effect between anion vacancies and halide ions in passive film breakdown on copper
ترجمه فارسی عنوان
اثر تطابق اندازه بین جابجایی های آنیون و یون های هالید در انفجار فیلم های غیر فعال بر روی مس
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
فلز مس، شکستگی فیلم منفعل، مطابق اندازه، اولین محاسبه اصول، هالید،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
چکیده انگلیسی
Different types of anion vacancies were optimized in passive films on copper via first-principles calculations based on density functional theory, and numerous potentiodynamic polarizations were performed to evaluate the size matching effect between anion vacancies and halide ions in passive film breakdown on copper. The size of the anion vacancies decreased to some extent compared with the corresponding atom due to the surface relaxation effect, and electrochemical experiments showed that the pitting potential for an oxide passive film on copper followed the order Fââ¯<â¯Clââ¯<â¯Brâ, while this order was Clââ¯<â¯Fââ¯<â¯Brâ for a sulfide passive film, which was attributed to the integrated effect of the energy of anion vacancy expansion and the Gibbs energy of dehydration. The pitting potential orders were the same on pre-oxidized or pre-sulfided copper with that of fresh copper in the same solution. Meanwhile, iodide ions were not compared due to the formation of poorly soluble copper iodides. The ratio of pit depth to pit mouth diameter on copper decreased with increasing pit volume, resulting in shallow pits with large mouth; thus, the catalytic-occluded cell effect was not obvious for copper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 292, 1 December 2018, Pages 817-827
Journal: Electrochimica Acta - Volume 292, 1 December 2018, Pages 817-827
نویسندگان
Decheng Kong, Chaofang Dong, Xin Wei, Cheng Man, Xiaowei Lei, Feixiong Mao, Xiaogang Li,