کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11006563 | 1505858 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InGaAs quantum well based dual-wavelength external cavity surface emitting laser for wideband tunable mid-infrared difference frequency generation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A two-chip vertical external cavity surface emitting laser with dual- wavelength output is presented. The active region of gain chip 1, designed for 960â¯nm wavelength, is composed of 6 repeats of strain uncompensated In0.185Ga0.815As/ GaAs multiple quantum wells, and the active region of gain chip 2, targeted for 1100â¯nm emission, is consisted of 16 repeats of strain compensated In0.26Ga0.74As/ GaAs0.94P0.06 multiple quantum wells. Two 1â¯mm thick uncoated fused silica birefringent filters are employed as the tuning elements, and the shorter wavelength can be tuned between 949 and 957â¯nm, while the longer wavelength can be changed from 1071 to 1106â¯nm by rotating the filters. The total intracavity power under dual-wavelength operation exceeds 36â¯W when the pump power is 10.5â¯W. For the use of intracavity different frequency generation, the wavelength tunability of down-converted mid-infrared radiation can cover a wavelength range from 6.7 to 9.0â¯Âµm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 204, December 2018, Pages 663-667
Journal: Journal of Luminescence - Volume 204, December 2018, Pages 663-667
نویسندگان
Renjiang Zhu, Shuangshuang Wang, Xiaolang Qiu, Xuehua Chen, Maohua Jiang, Heyang Guo-Yu, Peng Zhang, Yanrong Song,