کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11015845 | 1781703 | 2019 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of electron doping on the magnetic properties and electronic structures of Ba2MnMoO6
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electron-carrier-doping effects in an antiferromagnetic insulator Ba2MnMoO6 were investigated by La doping using the first-principles calculation. We examined the magnetic properties and the electronic structures for different doping ratios of La. The results indicate that a transition from an antiferromagnetic (AFM) insulating Ba2MnMoO6 to a AFM half-metallic Ba2-xLaxMnMoO6 (xâ¯â¤â¯1.0) and then a AFM metallic phase (xâ¯=â¯1.5, 2.0) occurs upon La doping. The injected electron accommodated into the Mo 4d states accounts for the metallic properties. Moreover, the electron correlation plays a crucial role in the determination of the electronic structure. The evaluated magnetic ordering temperatures for the doping systems are all higher than room temperature revealing the potential applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 774, 5 February 2019, Pages 618-624
Journal: Journal of Alloys and Compounds - Volume 774, 5 February 2019, Pages 618-624
نویسندگان
Shuhui Lv, Xiaoling Lv, Yanwei Li, Fanzhi Meng, Qiang Yang, Deming Han, Qian Duan,