Graphene-based field effect transistor in two-dimensional paper networks

• A graphene-based field effect transistor sensor was fabricated for two-dimensional paper network formats.
• The constructed GFET on 2DPN was shown to behave similarly to solution-gated GFETs.
• Electrolyte gating effects have more prominent effect over adsorption effects on the behavior of the device.
• The GFET incorporated on 2DPN was shown to yield linear response to presence of glucose and ssDNA soaked inside the paper.

We demonstrate the fabrication of a graphene-based field effect transistor (GFET) incorporated in a two-dimensional paper network format (2DPNs). Paper serves as both a gate dielectric and an easy-to-fabricate vessel for holding the solution with the target molecules in question. The choice of paper enables a simpler alternative approach to the construction of a GFET device. The fabricated device is shown to behave similarly to a solution-gated GFET device with electron and hole mobilities of ∼1256 cm2 V−1 s−1 and ∼2298 cm2 V−1 s−1 respectively and a Dirac point around ∼1 V. When using solutions of ssDNA and glucose it was found that the added molecules induce negative electrolytic gating effects shifting the conductance minimum to the right, concurrent with increasing carrier concentrations which results to an observed increase in current response correlated to the concentration of the solution used.

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