کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1240640 | 969133 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon](/preview/png/1240640.png)
چکیده انگلیسی
During the fabrication process of integrated circuits, dopant atoms segregate to energetically favorable sites at the interface between silicon and silicon dioxide. Because of the continuously shrinking device dimensions, this effect becomes even more significant. To describe it quantitatively within the framework of Technology Computer-Aided Design, the concentration profile at and near the SiO2/Si interface has to be characterized accurately. Total Reflection X-ray Fluorescence Spectrometry (TXRF) with successive etching was used to determine the impurity profile at the SiO2/Si interface with a resolution on the order of a nanometer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Spectrochimica Acta Part B: Atomic Spectroscopy - Volume 62, Issue 5, May 2007, Pages 481–484
Journal: Spectrochimica Acta Part B: Atomic Spectroscopy - Volume 62, Issue 5, May 2007, Pages 481–484
نویسندگان
C. Steen, A. Nutsch, P. Pichler, H. Ryssel,